1/10 acs110-7sn/sb2 ac line switch sot-223 acs110-7sn n blocking voltage : v drm /v rrm = +/-700v n avalanche controlled : v cl typ = 1100 v n nominal conducting current : i t(rms) =1a n gate triggering current : i gt <10ma n switch integrated driver n high noise immunity : static dv/dt >500v/s features the acs110 belongs to the ac line switch family built around the asd? concept. this high perfor- mance switch circuit is able to control a load up to 1 a. the acs? switch embeds a high voltage clamp- ing structure to absorb the inductive turn off energy and a gate level shifter driver to separate the digital controller from the main switch. it is triggered with a negative gate current flowing out of the gate pin. description com com g out n no external protection snubber or varistor needed n enables equipment to meet iec 61000-4-5 & iec 335-1 (dil-8 package) n reduces component count up to 80 % n interfaces directly with the microcontroller n eliminates any gate kick back on the microcontroller n allows straightforward connection of several acs? on same cooling pad (sot-223) benefits out com g s d on functional diagram dil-8 ACS110-7SB2 com out com com com g n ac static switching in appliance control systems n drive of low power high inductive or resistive loads like - relay, valve, solenoid, dispenser - pump, fan, micro-motor - defrost heater main applications www.kersemi.com
acs110-7sn/sb2 2/10 symbol parameter value unit v drm /v rrm repetitive peak off-state voltage tj = -10 c 700 v i t(rms) rms on-state current full cycle sine wave 50 to 60 hz sot-223 ttab = 105 c 1 a dil-8 tlead = 110 c i tsm non repetitive surge peak on-state current tj initial = 25c, full cycle sine wave f =50 hz 8 a f =60 hz 11 a i 2 t fusing capability tp = 10ms 0.35 a2s di/dt repetitive on-state current critical rate of rise i g = 10ma (tr < 100ns) tj = 125c f = 120 hz 50 a/ m s v pp non repetitive line peak pulse voltage note 1 2kv tstg storage temperature range - 40 to + 150 c tj operating junction temperature range - 30 to + 125 c tl maximum lead soldering temperature during 10s 260 c note 1 : according to test described by iec61000-4-5 standard & figure 3. absolute ratings (limiting values) for either positive or negative polarity of pin out voltage in respect to pin com voltage symbol parameter value unit p g (av) average gate power dissipation 0.1 w i gm peak gate current (tp = 20s) 1 a v gm peak positive gate voltage (in respect to pin com) 5 v gate characteristics (maximum values) symbol parameter value unit rth (j-a) junction to ambient s = 5cm2 sot-223 60 c/w dil-8 60 c/w rth (j-l) junction to tab/lead for full cycle sine wave conduction sot-223 20 c/w dil-8 15 c/w s = copper surface under tab thermal resistances www.kersemi.com
acs110-7sn/sb2 3/10 symbol test conditions values unit i gt v out =12v (dc) r l =140 w qii - qiii tj=25c max 10 ma v gt v out =12v (dc) r l =140 w qii - qiii tj=25c max 1 v v gd v out =v drm r l =3.3k w tj=125c min 0.15 v i h i out = 100ma gate open tj=25c max 45 ma i l i g = 20ma tj=25c max 65 ma v tm i out = 1.4a tp=380 m s tj=25c max 1.3 v v to tj=125c max 0.8 v rd tj=125c max 300 m w i drm / i rrm v out = 700v tj=25c max 2 m a tj=125c max 200 dv/dt v out =460v gate open tj=110c min 500 v/ m s (di/dt)c (dv/dt)c = 20v/ m s tj=125c min 0.5 a/ms v cl i cl = 1ma tp=1ms tj=25c typ 1100 v electrical characteristics for either positive or negative polarity of pin out voltage respect to pin com voltage excepted note 3*. parameter symbol parameter description i gt triggering gate current v gt triggering gate voltage v gd non-triggering gate voltage i h holding current i l latching current v tm peak on-state voltage drop v to on state threshold voltage rd on state dynamic resistance i drm /i rrm maximum forward or reverse leakage current dv/dt critical rate of rise of off-state voltage (dv/dt)c critical rate of rise of commutating off-state voltage (di/dt)c critical rate of decrease of commutating on-state current v cl clamping voltage i cl clamping current parameter description www.kersemi.com
acs110-7sn/sb2 4/10 the acs110 device is well adapted to washing machine, dishwasher, tumble drier, refrigerator, water heaters,air-conditioning systems, microwave ovens and other cookware. it has been designed especially to switch on & off low power loads such as solenoid, valve, relay, dispenser, micro-motor, pump, fan and defrost heaters. pin com: common drive reference to connect to the power line neutral pin g: switch gate input to connect to the digital controller pin out: switch output to connect to the load this acs? switch is triggered with a negative gate current flowing out of the gate pin g. it can be driven di- rectly by the digital controller through a resistor as shown on the typical application diagram. several acs110 devices can be connected on the same cooling pcb pad, which is the com pin. thanks to its thermal and turn off commutation performances, the acs110 switch is able to drive with no turn off additional snubber an inductive load up to 1 a. ac line switch basic application out acs110 com g s d on st72 mcu n ac mains l r - vcc l m load typical application diagram www.kersemi.com
acs110-7sn/sb2 5/10 fig. a: turn-off operation of the acs110 switch with an electro-valve: waveform of the pin out current i out and out-com voltage v out . v out i out v cl i h fig. b: acs110 switch static characteristic. the acs110 switch is able to sustain safely the ac line transient voltages either by clamping the low en- ergy spikes or by breaking over under high energy shocks, even with high turn-on current rises. the test circuit of the figure c is representative of the final acs application and is also used to stress the acs switch according to the iec 61000-4-5 standard conditions. thanks to the load, the acs switch sus- tains the voltage spikes up to 2 kv above the peak line voltage. it will break over safely even on resistive load where the turn on current rise is high as shown on figure d. such non repetitive test can be done 10 times on each ac line voltage polarity. ac line transient voltage ruggedness l r v ac +v pp surge voltage ac line & generator rg = 220 w com out g s d on acsxx fig. c: overvoltage ruggedness test circuit for resistive and inductive loads according to iec61000-4-5 standards. r = 150 w , l = 10h, v pp = 2kv. fig. d: current and voltage of the acs110 dur- ing iec61000-4-5 standard test wit hr=150 w , l=10h&v pp = 2kv. www.kersemi.com
acs110-7sn/sb2 6/10 maximum power dissipation vs rms on state current. rms on-state current vs ambient temperature, case temperature and package relative variation of thermal impedance junction to ambient vs pulse duration and package relative variation of gate trigger current vs junction temperature relative variation of holding and latching current vs junction relative variation of dv/dt vs tj relative variation of (dv/dt) c vs (di/dt) c surge peak on-state current vs number of cycles non repetitive surge peak on-state current for a sinusoidal pulse with tp<10ms, and corresponding of i2t. on-state characteristics (maximal values) thermal resistance junction to ambient vs copper surface under tab relative variation of critical (di/dt)c vs junction temperature other figures 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i (a) t(rms) a =180 180 a a p(w) fig. 1: maximum power dissipation versus rms on-state current. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 t /t (c) tab lead a =180 sot-223 - dil-8 i (a) t(rms) fig. 2-1: rms on-state current versus tab or lead temperature. i (a) t(rms) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 t (c) amb a =180 printed circuit board fr4 natural convection s=5cm2 fig. 2-2: rms on-state current versus ambient temperature. 1.e-02 1.e-01 1.e+00 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t (s) p k=[zth /rth ] (j-a) (j-a) fig. 3: relative variation of thermal impedance junction to ambient versus pulse duration. www.kersemi.com
acs110-7sn/sb2 7/10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 t (c) j i gt i& i lh i , i , i [t ] / i , i , i [t = 25c] gthl j gthl j fig. 4: relative variation of gate trigger current, holding current and latching versus junction temperature (typical values). 0 1 2 3 4 5 6 7 8 25 50 75 100 125 t (c) j dv/dt [t ] / dv/dt [t = 125c] jj v out =460v fig. 5: relative variation of static dv/dt versus junction temperature. 0 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 number of cycles non repetitive t initial=25c j repetitive t =105c ab i (a) tsm t=20ms fig. 8: surge peak on-state current versus number of cycles. (di/dt) [(dv/dt) ] / specified (di/dt) cc c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 40 45 50 (dv/dt) (v/s) c v out =400v fig. 6: relative variation of critical rate of de- crease of main current versus reapplied dv/dt (typical values). 0.1 1.0 10.0 100.0 0.01 0.10 1.00 10.00 t (ms) p i tsm i2t i (a), i2t (a2s) tsm t initial=25c j fig. 9: non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of i2t. (di/dt) [tj] / (di/dt) [t = 125c] ccj 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 t (c) j v out =400v fig. 7: relative variation of critical rate of decrease of main current versus junction temperature. www.kersemi.com
acs110-7sn/sb2 8/10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 s(cm2) sot-223 rth (c/w) (j-a) fig. 11: thermal resistance junction to ambient versus copper surface under tab (printed circuit board fr4, copper thickness: 35m) acs 1 10 - 7 s x ac switch number of switches i 10 = 1.0a t(rms) v 7 = 700v drm gate sensitivity s= 10ma package n = sot-223 b2 = dil-8 ordering information 0.01 0.10 1.00 10.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v (v) tm t j max. : v =0.8v r =300m to d w t j =25c t j =125c i (a) tm fig. 10: on-state characteristics (maximum values). www.kersemi.com
acs110-7sn/sb2 9/10 package outline mechanical data sot-223 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.80 0.071 a1 0.02 0.10 0.001 0.004 b 0.60 0.70 0.85 0.024 0.027 0.033 b1 2.90 3.00 3.15 0.114 0.118 0.124 c 0.24 0.26 0.35 0.009 0.010 0.014 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.3 0.090 e1 4.6 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v 10 max a a1 b e1 d b1 h e e c v 1 4 2 3 description pin 1 2 3 4 gate drain source drain base collector collector emitter recommended soldering pattern sot-223 package foot print sot-223 www.kersemi.com
acs110-7sn/sb2 10/10 package outline mechanical data dil-8 8 1 5 4 eb e h gauge plane 0.38 d e1 ea c b b2 e a l a1 a2 ref. dimensions millimetres inches min. typ. max. min. typ. max. a 5.33 0.21 a1 0.38 0.015 a2 2.92 3.30 4.95 0.115 0.130 0.195 b 0.36 0.46 0.56 0.014 0.018 0.022 b2 1.14 1.52 1.78 0.045 0.060 0.070 c 0.20 0.25 0.36 0.008 0.010 0.014 d 9.02 9.27 10.16 0.355 0.365 0.40 e 7.62 7.87 8.26 0.30 0.310 0.325 e1 6.10 6.35 7.11 0.240 0.25 0.280 e 2.54 0.10 ea 7.62 0.30 eb 10.92 0.430 l 2.92 3.30 3.81 0.115 0.130 0.15 ordering type marking package weight base qty delivery mode acs110-7sn acs1107s sot-223 0.12 g 1000 tape & reel ACS110-7SB2 acs1107s dil8 0.6 g 50 tube n epoxy meets ul94,v0 other information www.kersemi.com
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